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641MH FDD5N50F 54FCT 30150 10GD1 0E335K8R BFA1560R 307C1487
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  Datasheet File OCR Text:
 MPSA42
NPN Silicon General Purpose Transistors
TO-92
1. EMITTER 2. BASE 3. COLLECTOR
1
2
3
MAXIMUM RATINGS* TA=25 unless otherwise noted
Symbol VCBO VCEO VEBO IC TJ, Tstg RJA RJC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Junction and Storage Temperature Thermal Resistance, junction to Ambient Thermal Resistance, unction to Case
Parameter
Value 310 305 5 500 -55-150 200 83.3
Units V V V mA /mW /mW
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) hFE(3) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) fT Test
unless
otherwise
specified)
MIN 310 305 5 0.25 0.1 60 80 75 0.2 0.9 50 V V MHz 250 TYP MAX UNIT V V V A A
conditions
Ic=100uA, IE=0 Ic=1mA, IB=0 IE=100A, IC=0 VCB=200V, IE=0 VEB=5V, IC=0 VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=30mA IC=20mA, IB=2mA IC=20mA, IB=2mA VCE=20V, IC=10mA,f=30MHZ
CLASSIFICATION OF hFE(2)
Rank Range A 80-100 B1 100-150 B2 150-200 C 200-250
WEITRON
http://www.weitron.com.tw
MPSA42
WEITRON
http://www.weitron.com.tw
MPSA42
TO-92 Outline Dimensions
E
unit:mm
C
J K
G
Dim A B C D E G H J K L
H
TO-92
Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50
B
L
WEITRON
http://www.weitron.com.tw
D
A


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